- Autor(in)
- Sponsor(in)
- Referenz
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10 P. B. Allen, V. Heine, J. Phys. C 9 (1976) 2305
11 D. J. Chadi, M. L. Cohen, Phys. Rev. B 8 (1973) 5747
12 H. J. Monkhorst, J. D. Pack, Phys. Rev. B 13 (1976) 5188
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17 R. D. King-Smith, R. J. Needs, 20th International Conference on the Physics of Semiconductors, Eds. E. M. Anastassakis, J. D. Joannopoulos, Vol. 3, p. 1755 (World Scientific, 1990)
18 R. D. King-Smith, R. J. Needs, J. Phys.: Condens. Matt. 2 (1990) 3431
1 M. Klenner, C. Falter, W. Ludwig, preceding paper
2 P. B. Allen, M. Cardona, Phys. Rev. B 23 (1981) 1495
3 P. B. Allen, M. Cardona, Phys. Rev. B 27 (1983) 4760
4 P. Lautenschlager, P. B. Allen, M. Cardona, Phys. Rev. B 31 (1985) 2163
5 C. K. Kim, P. Lautenschlager, M. Cardona, Solid State Comm. 59 (1986) 797
6 S. Zollner, S. Gopalan, M. Cardona, Solid State Comm. 77 (1991) 485
7 C. Falter, Phys. Rep. 164 (1988) No. 1 and 2
8 W. E. Pickett, J. Phys. C 12 (1979) 1491
9 C. Falter, H. Rakel, M. Klenner, W. Ludwig, Phys. Rev. B 40 (1989) 7727
- Seitenbereich
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0034 - 0038
- Schlagwort(e)
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<KWD>Electron-phonon interaction
Density response
Phonons-lattice dynamics
- Zusammenfsg.
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We have calculated the temperature dependence of the direct and indirect band gaps in silicon and germanium. The electron-phonon potential as well as the phonon frequencies and eigenvectors are calculated consistently within the rigid quasi-ion model. Comparison is made with experiment and with the theoretical results of Allen and Cardona and Lautenschlager et al.
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- Forschungsartikel