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- Referenz
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0011 - 0014
- Schlagwort(e)
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<KWD>Disordered systems
Metal-insulator transition
Spin-orbit scattering
- Zusammenfsg.
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Doping amorphous Ga<sub>x</sub>Ar<sub>1-x</sub> mixtures with the strong spin-orbit scatterer Bi has a dramatic effect on the metal-insulator transition (MIT) occurring in this system at a critical metal atomic concentration <I>x</I><sub>c</sub>: (i) the MIT is shifted from <I>x</I>´<sub>c</sub> = 0.36 ± 0.01 (corresponding to a critical metal volume fraction <I>v</I>´<sub>c</sub> = 0.19 ± 0.01) of the undoped system to a lower value of <I>x</I><sub>c</sub> = 0.25 ± 0.01 (<I>v</I><sub>c</sub> = 0.14 ± 0.01) for (Ga<sub>0.9</sub>Bi<sub>0.1</sub>)<sub>x</sub>Ar<sub>1-x</sub> and (ii) the critical exponent <I>v</I> and <I>g</I> of the dc conductivity and Hall coefficient, respectively, change from <I>v</I>´ = 0.5 ± 0.1 and <I>g</I>´ = 0 for the undoped samples to <I>v</I> = 1.3 ± 0.3 and <I>g</I> = 0.5 ± 0.1 for (Ga<sub>0.9</sub>Bi<sub>0.1</sub>)<sub>x</sub>Ar<sub>1-x</sub>.
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